Gallium-Arsenide (GaAs) Wafer Si doped – 2” (50.8mm) Dia.

 59,90 inkl. MWSt.

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Beschreibung

Gallium-Arsenide (GaAs) Wafer
Zn-doped for semiconductor applications. Diameter: 50.8mm, Thickness 500?m (0,5mm) – One side optically polished one side fine ground. Comes with original wafer tray.