Gallium-Arsenid GaAs – Wafer – Si doped – 1” (25.4mm) Dia.

Beschreibung

Gallium-Arsenide (GaAs) Wafer

Si-doped for semiconductor applications. Diameter: 25.4mm, Thickness 500?m (0,5mm) – One side optically polished one side fine ground. Comes with original wafer tray.